The global gallium nitride semiconductor devices market size is expected to reach USD 12,187.4 million by 2032, according to a new study by Polaris Market Research. The report “Gallium Nitride Semiconductor Devices Market Share, Size, Trends, Industry Analysis Report, By Product (GaN Radio Frequency Devices, Opto-semiconductors, Power Semiconductors); By Component; By Wafer Size; By End-Use; By Region; Segment Forecast, 2023 - 2032” gives a detailed insight into current market dynamics and provides analysis on future market growth.
Gallium nitride (GaN) semiconductor devices are electronic components that utilize the compound semiconductor material gallium nitride. GaN is a wide-bandgap material with superior electrical and thermal properties, making it well-suited for high-power and high-frequency applications.
GaN semiconductor devices are known for their ability to operate at higher voltages, temperatures, and frequencies compared to silicon-based devices. They offer advantages such as lower power consumption, higher breakdown voltages, faster switching speeds, and higher efficiency.
GaN-based devices are commonly used in various applications, including power electronics, RF (radio frequency) and microwave devices, LEDs (light-emitting diodes), and solar cells. In power electronics, GaN transistors are used for power supplies, electric vehicles, renewable energy systems, and wireless charging applications.
The global interest in gallium nitride (GaN) semiconductor devices has surged due to the widespread adoption of RF power electronics and LEDs in various applications. While silicon technology continues to dominate the electronics industry, GaN has been steadily replacing its exceptional properties and high efficiency. GaN technology enables the operation of a larger electronic field within a significantly smaller footprint than conventional silicon, enabling faster frequency switching capabilities.
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The automotive industry is undergoing significant growth, fueled by increasing interest in gallium nitride (GaN) due to the rising adoption of LED and laser lights, the emergence of head-up displays, the growing prevalence of semi-autonomous and autonomous vehicles, and the expanding utilization of LiDAR (Light Detection and Ranging) technology. This trend is further amplified by the increasing integration of sensors and electronic components, which drives the demand for GaN.
In the United States, there is a strong emphasis on enhancing electronic defense technologies to uphold its unrivaled leadership in the industry. In September 2021, the US Department of Defense (DOD) awarded Intel a contract for the Rapid Assurance Microelectronics Prototypes Program (RAMP-C) to foster the country's wafer foundry ecosystem.
The increasing demand for high-performance and energy-efficient electronic devices has spurred numerous innovations and research and development endeavors in the market. In a significant development in September 2020, Navitas, a renowned gallium nitride (GaN) power integrated circuits supplier, unveiled GaNFast power ICs during a VIP investor meeting. These state-of-the-art ICs offer remarkable advantages, operating up to 20 times faster than silicon counterparts and enabling a three-fold increase in power while reducing size and weight.
Gallium Nitride Semiconductor Devices Market Report Highlights
Polaris Market Research has segmented the gallium nitride semiconductor devices market report based on product, component, wafer size, end-use, and region:
Gallium Nitride Semiconductor Devices, Product Outlook (Revenue - USD Million, 2019 - 2032)
Gallium Nitride Semiconductor Devices, Component Outlook (Revenue - USD Million, 2019 - 2032)
Gallium Nitride Semiconductor Devices, Wafer Size Outlook (Revenue - USD Million, 2019 - 2032)
Gallium Nitride Semiconductor Devices, End-Use Channel (Revenue - USD Million, 2019 - 2032)
Gallium Nitride Semiconductor Devices, Regional Outlook (Revenue - USD Million, 2019 - 2032)
Gallium Nitride Semiconductor Devices Market Report Scope
Report Attributes |
Details |
Market size value in 2023 |
USD 1,690.3 million |
Revenue forecast in 2032 |
USD 12,187.4 million |
CAGR |
23.7% from 2023 – 2032 |
Base year |
2022 |
Historical data |
2019 – 2021 |
Forecast period |
2023 – 2032 |
Quantitative units |
Revenue in USD million and CAGR from 2023 to 2032 |
Segments Covered |
By Product, By Component, By Wafer Size, By End-Use, By Region |
Regional scope |
North America, Europe, Asia Pacific, Latin America, Middle East & Africa |
Key Companies |
Efficient Power Conversion Corporation, Cree, Inc., Fujitsu Ltd., ST Micro Electronics, MACOM Technology Solutions, GaN Systems Inc., Qorvo Inc., Infineon Technologies AG, Cree Inc., NexgenPower Systems, Texas Instruments Incorporated; NXP Semiconductor, Toshiba Corporation, and Sumitomo Electric Industries, Analog Devices Inc. |
For Specific Research Requirements |